Katsuhide Ino, ROHM Co. Ltd.
Kazuhide Ino is Managing Executive Officer, CSO (Chief Strategy Officer) and Director of Accounting & Finance Headquarters of ROHM Co., Ltd. He has served as a member of the board since June 2020. From July 2017 through June 2020, he was Director of the Power Device Headquarters responsible for all power device related business units including Si, SiC and GaN devices. Prior to this role and from 2009, he successfully launched the SiC power device business achieving the world’s first mass production of SiC MOSFET in 2010, full SiC Module in 2012, launched the Si IGBT and IPM businesses in 2014, and customized IGBT module business for EV powertrain in 2010. He has also been responsible for the SiC substrate business of SiCrystal, Nuremberg, Germany since 2010 and has successfully established the material business which is well harmonized with ROHM’s SiC device business. He received his Ph.D. degree in electronic engineering from Tohoku University, Sendai, Japan in 1998. He has worked as a Postdoctoral Fellow of the Japan Society for the Promotion of Science at Tohoku University from 1996 to 1999 and joined ROHM, Kyoto, Japan in 1999.
Kyeongseok Park, ONSemi
Kyeongseok Park is director of SiC technology development team at onsemi. He received his B.S degree in Electrical Engineering at Korea University and M.S degree in Electrical Engineering at POSTECH (Pohang University Of Science and Technology)
He worked on Fairchild semiconductor from 1999 to 2016 and worked in Si BJT, Diode, IGBT and MOSFET technology development. He has worked on ON semiconductor since 2016 and focused on next generation SiC power device development.
Mario Giuseppe Saggio, STMicroelectronics
Mario Giuseppe Saggio is the Design Director of Silicon Carbide (SiC) devices in STMicrolectronics. He is the Head of the SiC technology and product development in ST. He obtained his Physics Degree on Material Science at the University of Catania in 1991. He joined ST in 1995 after working as a researcher for Italian (CNR IMETEM) and German (FhG IIS-B) institutes.
He has been leading the introduction and development of Silicon Superjunction technology in ST since 1998 with a significant contribution in the revolution of High Voltage Power devices. Mario began pioneering SiC research in 1997 and has been the head of the R&D and product development team for SiC Discrete and Modules since 2017.
Through more than 25 years of research and development at ST, Mario has registered 64 patents and authored or coauthored 66 papers for international journals and conferences.
Victor Veliadis, PowerAmerica
Victor Veliadis is Executive Director & CTO of PowerAmerica, a member-driven consortium of industry, universities, and national labs accelerating the commercialization of energy efficient SiC and GaN power semiconductor technologies. At PowerAmerica, he has managed a budget of $150 million that he strategically allocated to over 200 industrial and University projects to catalyze SiC/GaN semiconductor and power electronics manufacturing, workforce development, and job creation. His PowerAmerica educational activities have trained 420 full-time students in collaborative industry/University WBG projects, and engaged over 4600 attendees in tutorials, short courses, and webinars. Dr. Veliadis is an ECE Professor at NCSU, an IEEE Fellow, and an ΙΕΕΕ EDS Distinguished Lecturer. He has 27 issued U.S. patents, 6 book chapters, and over 150 peer-reviewed publications to his credit.
Prior to entering academia and taking an executive position at Power America in 2016, Dr. Veliadis spent 21 years in the semiconductor industry where his work included design, fabrication, and testing of SiC devices, GaN devices for military radar amplifiers, and financial and operations management of a commercial semiconductor fab. He has a Ph.D. degree in Electrical Engineering from John Hopkins University (1995).