ICSCRM 2023 List of the Invited Speakers

Bernd Thomas, Robert Bosch Corporation, Germany, High-Volume SiC Epitaxial Layer Manufacturing – High-Volume SiC Epitaxial Layer Manufacturing – Maintaining High Materials Quality of Lab Results in Production

Didier Chaussende, CNRS, EPM, France, The SiC/liquid interface: challenges in controlling SiC growth from solution

Hrishikesh Das, Onsemi, USA, The Role of Defects on SiC Device Performance and Ways to Mitigate Them

Tadaaki Kaneko, Kwansei University, Japan, Non-Destructive Characterization of Buried Damage in SiC Substrates

James Cooper, Purdue University and Sonrisa Research Inc., Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs

Masashi Kato, Nagoya Institute of Technology, Japan, Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation

Peter Gammon, Warwick University, UK, TBA
Yoshiyuki Yonezawa, National Institute of Advanced Industrial Science and Technology (AIST), Japan, High Energy Al Ion implantation for SiC Super Junction (SJ) Structures

Haiyan Ou, Denmark Technical University, Novel photonic applications of SiC

Michael Trupke, Austrian Academy of Sciences, Vanadium in SiC: the spin for telecom quantum networks

Edward VanBrunt, Wolfspeed, Inc., TBA
Matteo Meneghini, University of Padua, Italy, Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling

Linhua Huang, Hong Kong University of Science and Technology, Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

Rachael Myers Ward, Naval Research Laboratory, Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications

Teruaki Kumazawa, Mirise Tech, Japan, Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate

Shota Kozakai, Kyoto University, Japan, Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC

ICSCRM 2023 List of the Invited Poster’s Presenters

Ju-Hyeong Sun, Korea Institute of Ceramic Engineering and Technology, Korea

Ju-Hyeong Sun, Jae-Hyun Park, Yun-Ji Shin, Si-Young Bae, Chang-Min Kim, Won-Jae Lee and Seong-Min Jeong, SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source

Patrick Fiorenza, CNR-IMM, Italy

Patrick Fiorenza, Marco Zignale, Edoardo Zanetti, Mario S. Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo and Fabrizio Roccaforte, Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Atsuhiro Akiba, University of Tsukuba, Japan

Atsuhiro Akiba, Noriyuki Iwamuro and Hiroshi Yano, Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique

Mitsuaki Kaneko, University of Kyoto, Japan

Mitsuaki Kaneko, Hideaki Takashima, Shigeki Takeuchi and Tsunenobu Kimoto, Density control of single-photon sources formed at a SiO2/SiC interface