International Steering Committee & Advisory Panel

Peder Bergman, Linköping University

Didier Chaussende, CNRS / Univ. Grenoble Alpes

Jim Choyke, University of Pittsburgh

Danilo Crippa, ASM

Robert P. Devaty, University of Pittsburgh

Michael Dudley, Stony Brook University

Peter Friedrichs, Infineon

Adam Gali, Wigner Research Centre for Physics

Philippe Godignon, CEA Leti

Hisayoshi Itoh, Japan Atomic Energy Agency (JAEA)

Nam Kyun Kim, Korea Electrotechnology Research Institute

Tsunenobu Kimoto, University of Kyoto

Michael Krieger, Friedrich-Alexander-Universität

Francesco La Via, CNR – IMM

Alexander Lebedev, Ioffe Institute

Hiroyuki Matsunami University of Kyoto

Phil Mawby, University of Warwick

Philip G. Neudeck, NASA

Noboru Ohtani, Kwansei Gakuin University

Hajime Okumura, National Institute of Advanced Industrial Science and Technology (AIST)

Dominique Planson, University of Lyon

Fabrizio Roccaforte, CNR-IMM

Adolf Schoener, Coherent

Robert Stahlbush, Us Navy

Hidekazu Tsuchida, Central Research Institute of Electric Power Industry

Victor Veliadis, PowerAmerica

Hiroshi Yano, University of Tsukuba

 

Technical Program Committee

 

Track 1: Material & Growth

Didier    Chaussende, CNRS / Univ. Grenoble Alpes

Noboru Ohtani, Kwansei Gakuin University

Takeshi Ohshima, National Institutes for Quantum Science and Technology

Won-Jae Lee, Dongeui University

Francesco La Via, CNR – IMM

Hidekazu Tsuchida, Central Research Institute of Electric Power Industry (CRIEPI)

Adolf Schoner, Coherent

Marco   Mauceri, ASM

Elif Balkas. Wolfspeed

Thomas Bernd, Bosch

Track 2: Defects and Characterization

Michael Dudley, Stony Brook University

Albert    Burk, Coherent

Julie Widiez, CEA Leti

Yosiyuki Yonezawa

Jan Vobecky, University of Prague

Kumiko Konishi, Mistubishi

Jean-François     Michaud, University of Tours

Tsunenobu Kimoto, University of Kyoto

Robert  Stahlbush, NASA

Martin  Domeji, On Semiconductor

Track 3: Device Process and Characterization

Fabrizio Roccaforte, CNR-IMM

Ulrike    Grossner, ETH Zurich – Advanced Power Semiconductor Laboratory

David     Clark, ClasSiC Wafer FAb

Jun Zeng, MaxPOwer

Simone Rascunà, ST Microelectronics

Mike      Jennings, University of Swansea

Hiroshi Yano, University of Tsukuba

Gianpaolo Romano, Hitachi Energy

Philippe Godignon, CEA Leti

Peter Gammon, University of Warwick

Peter Friedrichs, Infineon

Daniel   Alquier, GREMAN-CNRS

Track 4: Devices Physics, Design, and Characterization

Sang-Mo Koo, Kwangwoon University

Naruhisa Miura, Mitsubishi Electric

Sid Sundaresan, GeneSic Semiconductor

Luca Maresca, University of Naples Federico II

Marina  Antoniou, University of Warwick

Kim Hyoung Woo, Korea Electrotechnology Research Institute

Andrei   Mihaila, Hitachi Energy

Victor    Veliadis, PowerAmerica

Mario    Saggio, ST Microelectronics

Dethard Peters, Infineon

Kimimori Hamada, Huawei

Track 5: Quantum Applications and Sensors

Georgy Astakhov, Helmholtz-Zentrum Dresden-Rossendorf

Michel Bockstedte, Johannes Kepler University

Itoh Hisayoshi, National Institutes for Quantum Science and Technology

Philip Neudeck, NASA Glenn Research Center

Adam Gali, Wigner Research Centre for Physics

Iulian Nistor, mqSemi AG

Michael Krieger, Friedrich-Alexander-Universität Erlangen-Nürnberg

Hannes Kraus, NASA

Track 6: Reliability, applications and packaging

Peter Moens, ON Semiconductor

Dominique Planson, Ampere Laboratory

Neo Lophitis, University of Nottingham

Subhas Bose, StarPower

Idaka Shiori, Mitsubishi Electric Europe B.V.

Michele Riccio, University of Naples Federico II

Nando, Kaminski, University of Bremen

Don Gajewski, Wolfspeed

Arnost Kopta, SwissSEM Technologies