Best Student Paper Award | icscrm-2023.org

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	1 (lowest)	2	3	4	5 (highest)
Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET	1 (lowest)Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET 1 (lowest)	2Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET 2	3Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET 3	4Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET 4	5 (highest)Dahui Yoo, MiJin Kim, Inho Kang, Hyunsuck Baik, Jee-Hun Jeong, Min-Seok Jang, Jung-Bok Lee and Ho-Jun Lee The Effects of Power Cycling Test on the 4H-SiC/SiO2 Interface of 4H-SiC MOSFET 5 (highest)
Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination	1 (lowest)Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination 1 (lowest)	2Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination 2	3Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination 3	4Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination 4	5 (highest)Yancong Liu, Yu Zhou, Hao Yuan, Qingwen Song, Xiaoyan Tang, Lejia Sun and Yuming Zhang Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination 5 (highest)
Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements	1 (lowest)Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 1 (lowest)	2Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 2	3Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 3	4Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 4	5 (highest)Alberto Marcuzzi, Marina Avramenko, Carlo De Santi, Filip Geenen, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 5 (highest)
Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress	1 (lowest)Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress 1 (lowest)	2Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress 2	3Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress 3	4Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress 4	5 (highest)Limeng Shi and Anant Agarwal Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress 5 (highest)
Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress	1 (lowest)Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress 1 (lowest)	2Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress 2	3Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress 3	4Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress 4	5 (highest)Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress 5 (highest)
Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes	1 (lowest)Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes 1 (lowest)	2Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes 2	3Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes 3	4Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes 4	5 (highest)Mohamed Alaluss, Christoph Böhm, Clemens Herrmann, Thomas Basler, Rudolf Elpelt and Guang Zeng 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes 5 (highest)
Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments	1 (lowest)Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments 1 (lowest)	2Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments 2	3Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments 3	4Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments 4	5 (highest)Amna Siddiqui, Anders Hallén and Muhammad Usman A Predictive Model to Assess the Reliability of 4H-SiC Power Diodes in Radiation-rich Environments 5 (highest)
Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests	1 (lowest)Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests 1 (lowest)	2Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests 2	3Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests 3	4Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests 4	5 (highest)Roman Boldyrjew-Mast, Patrick Heimler, Xing Liu, Kristiane Reiter, Christian Schwabe, Nick Thönelt, Josef Lutz and Thomas Basler Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests 5 (highest)
Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs	1 (lowest)Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs 1 (lowest)	2Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs 2	3Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs 3	4Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs 4	5 (highest)Michel Nagel, Ivana Kovacevic-Badstuebner, Salvatore Race, Daniele Romano, Giulio Antonini and Ulrike Grossner Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs 5 (highest)
Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation	1 (lowest)Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation 1 (lowest)	2Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation 2	3Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation 3	4Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation 4	5 (highest)Manuel Belanche Guadas, Marcelo Martinez-Valenzuela, Maria Martins, Piyush Kumar, Marianne E. Bathen, Corinna Martinella and Ulrike Grossner DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation 5 (highest)
Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures	1 (lowest)Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures 1 (lowest)	2Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures 2	3Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures 3	4Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures 4	5 (highest)Magdalena Weger, Michel Bockstedte and Gregor Pobegen Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures 5 (highest)
Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes	1 (lowest)Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes 1 (lowest)	2Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes 2	3Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes 3	4Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes 4	5 (highest)Min-Yeong Kim, Tae-Hee Lee, Myeong-Cheol Shin, Ory Maimon, Nolan Hendricks, Neil Moser, Sujitra Pookpanratana, Qiliang Li and Sang-Mo Koo Ga2O3/SiC Heterostructure Schottky Diodes 5 (highest)
Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy	1 (lowest)Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy 1 (lowest)	2Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy 2	3Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy 3	4Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy 4	5 (highest)Philipp Natzke, Manuel Belanche, Piyush Kumar, Raphael Färber, Colin Kälin, Mathieu Luisier, Misagh Ghezellou, Jawad Ul-Hassan, Marianne Etzelmüller Bathen and Ulrike Grossner Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy 5 (highest)
Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers	1 (lowest)Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers 1 (lowest)	2Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers 2	3Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers 3	4Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers 4	5 (highest)Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley Characterization of Growth Sectors in Gallium Nitride Substrate Wafers 5 (highest)
Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs	1 (lowest)Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs 1 (lowest)	2Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs 2	3Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs 3	4Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs 4	5 (highest)Marike Van Orden, Gregor Pobegen and Peter Hadley Temperature Dependent Current Signal from Interface Defects after Optical Excitation in 4H-SiC MOSFETs 5 (highest)
Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes	1 (lowest)Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes 1 (lowest)	2Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes 2	3Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes 3	4Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes 4	5 (highest)Ryoya Ishikawa, Mitsuaki Kaneko and Tsunenobu Kimoto Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes 5 (highest)
Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals	1 (lowest)Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals 1 (lowest)	2Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals 2	3Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals 3	4Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals 4	5 (highest)Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals 5 (highest)
Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs	1 (lowest)Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs 1 (lowest)	2Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs 2	3Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs 3	4Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs 4	5 (highest)Maximilian Goller, Josef Lutz, Gilberto Curatola, Samir Mouhoubi and Thomas Basler Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs 5 (highest)
Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD	1 (lowest)Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD 1 (lowest)	2Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD 2	3Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD 3	4Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD 4	5 (highest)Tae-Hee Lee, Min-Yeong Kim, Se-Rim Park, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Soo-Young Moon, Geon-Hee Lee, Seong-Ho Cho, Si-Young Bae and Sang-Mo Koo Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD 5 (highest)
Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC	1 (lowest)Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC 1 (lowest)	2Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC 2	3Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC 3	4Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC 4	5 (highest)Orazio Samperi, Lasse Vines, Anders Hallén and Maria Elena Fragalà Charge carrier capture from prominent defect centers in 4H-SiC 5 (highest)
Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC	1 (lowest)Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC 1 (lowest)	2Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC 2	3Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC 3	4Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC 4	5 (highest)Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko and Tsunenobu Kimoto Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC 5 (highest)
Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors	1 (lowest)Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors 1 (lowest)	2Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors 2	3Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors 3	4Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors 4	5 (highest)Sarah Morais Bezerra, Dávid Beke and Ádam Gali Combustion synthesis of SiC towards preparation of quantum sensors 5 (highest)
Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC	1 (lowest)Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC 1 (lowest)	2Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC 2	3Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC 3	4Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC 4	5 (highest)Myeong-Cheol Shin, Seung-Hwan Chung, Hyung-Jin Lee and Sang-Mo Koo Deep Level Transient Spectroscopy Analysis of Defects in Different Diode Structures in 4H-SiC 5 (highest)
Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center	1 (lowest)Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center 1 (lowest)	2Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center 2	3Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center 3	4Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center 4	5 (highest)Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center 5 (highest)
Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy	1 (lowest)Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy 1 (lowest)	2Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy 2	3Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy 3	4Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy 4	5 (highest)Maria Mendes Martins, Piyush Kumar, Marianne Bathen, Ulrike Grossner and Thomas Prokscha Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy 5 (highest)
Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)	1 (lowest)Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 1 (lowest)	2Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 2	3Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 3	4Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 4	5 (highest)Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Jia-Wei Hu and Chih-Fang Huang A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 5 (highest)
Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding	1 (lowest)Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding 1 (lowest)	2Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding 2	3Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding 3	4Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding 4	5 (highest)Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu and Chih-Fang Huang Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding 5 (highest)
Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics	1 (lowest)Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics 1 (lowest)	2Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics 2	3Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics 3	4Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics 4	5 (highest)Yui Nagase, Shuhei Nakata and Takaaki Tominaga Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics 5 (highest)
Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism	1 (lowest)Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism 1 (lowest)	2Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism 2	3Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism 3	4Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism 4	5 (highest)Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Vincenzo d'Alessandro and Andrea Irace A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism 5 (highest)
Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact	1 (lowest)Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact 1 (lowest)	2Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact 2	3Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact 3	4Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact 4	5 (highest)Zimo Yuan, Jang-Kwon Lim, Alex Metreveli, Hithiksha Krishna Murthy, Mietek Bakowski and Anders Hallén Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact 5 (highest)
Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs	1 (lowest)Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs 1 (lowest)	2Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs 2	3Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs 3	4Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs 4	5 (highest)Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner and Ulrike Grossner Accuracy of Split C-V Characterization of SiC Power MOSFETs 5 (highest)
Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET	1 (lowest)Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET 1 (lowest)	2Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET 2	3Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET 3	4Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET 4	5 (highest)Ting-Fu Chang, Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu and Chih-Fang Huang High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET 5 (highest)
Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices	1 (lowest)Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices 1 (lowest)	2Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices 2	3Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices 3	4Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices 4	5 (highest)Enora Vuillermet, Anaël Sédilot, Nicolas Bercu, Régis Deturche, Elise Usureau, Jérémie Béal and Mihai Lazar Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices 5 (highest)
Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs	1 (lowest)Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs 1 (lowest)	2Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs 2	3Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs 3	4Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs 4	5 (highest)Finn Monaghan, Antonio Martinez and Mike Jennings Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs 5 (highest)
Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer	1 (lowest)Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer 1 (lowest)	2Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer 2	3Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer 3	4Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer 4	5 (highest)Yeongeun Park, Jaejin Song, Jeongyun Lee, Junyoung Choi, Soontak Kwon and Ogyun Seok Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer 5 (highest)
Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2	1 (lowest)Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 1 (lowest)	2Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 2	3Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 3	4Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 4	5 (highest)Emran Ashik, Veena Misra and Bongmook Lee High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 5 (highest)
Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET	1 (lowest)Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 1 (lowest)	2Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 2	3Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 3	4Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 4	5 (highest)Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Antonio Salvatore Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 5 (highest)
Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation	1 (lowest)Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation 1 (lowest)	2Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation 2	3Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation 3	4Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation 4	5 (highest)Scott Greenhorn, Konstantinos Zekentes, Edwige Bano, Valérie Stambouli-Sene, Gwenaelle Pound-Lana and Jumana Boussey Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation 5 (highest)
Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs	1 (lowest)Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs 1 (lowest)	2Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs 2	3Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs 3	4Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs 4	5 (highest)Kyrylo Melnyk, Luyang Zhang, Peter Michael Gammon, Arne Benjamin Renz and Marina Antoniou Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs 5 (highest)